RF amplification property of the MgO-based magnetic tunnel junction using field-induced ferromagnetic resonance

摘要

The radio-frequency (RF) voltage amplification property of a tunnelmagnetoresistance device driven by an RF external-magnetic-field-inducedferromagnetic resonance was studied. The proposed device consists of a magnetictunnel junction (MTJ) and an electrically isolated coplanar waveguide. Theinput RF voltage applied to the waveguide can excite the resonant dynamics inthe free layer magnetization, leading to the generation of an output RF voltageunder a DC bias current. The dependences of the RF voltage gain on the staticexternal magnetic field strength and angle were systematically investigated.The design principles for the enhancement of the gain factor are alsodiscussed.